High quaility Epileds chip deep uv led - GP-1w uv led

High quaility Epileds chip deep uv led, Taiwan Epileds chip, USA Intematix Phosphor, Dow Corning silica gel - details see: https://www.lightinghere.com/high-quaility-epileds-chip-deep-uv-led-10015079

Type: UV LED	Model Number: GP-1w uv led	Chip Material: InGaN	Emitting Color: purple
Luminous Intensity: 365-370nm	Luminous Flux(lm): 3	Optical Attenuation(%): 3	Power: 1w
Viewing Angle(°): 140	Operating Temperature(℃): -30 - 75	Storage Temperature(℃): -40 - 80	Place of Origin: Guangdong China (Mainland)
Brand Name: GMKJ	Certification: CE,RoHS	Product Nmae: High quaility Epileds chip deep uv led	Chip: Epileds 45mail
Current: 350mA	WLP: 370-375nm	Viewing Angle: 140	Phosphor: Intematix Phosphor
Operating Temperature Range: -30 ~ +75 degree	Storage Temperature Range: -40 ~ +85 degree	LED Junction Temperature: 125 degree	Luminous Flux: 5 lm

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High quaility Epileds chip deep uv led 370-375nm

Benefits	Features
Advanced Capabilities	1.Heat-sensitive,thin substrates 2.Controlled curing intensity 3.Instant light 4.Reflow process compatible 5.High UV-intensity stability 6.Good homogeneity of the radiation 7.No visible interferences and reflections
Operating Economics	1.Energy Efficient 2.Long operation life,Low maintenance 3.Low voltage operation
Environmental Advantages	1.Mercury Free 2.Ozone Free 3.Workplace Safety 4. NO infrared-radiation 5. NO or low fire hazard 6. NO or low burn hazard 7. RoHs conform lamps possible 8. NO UV-B and UV-C radiation possible, generates only UV-A

Guangmai-the leader in deep uv led:

1.UV-A-intensity in different distances(365-370nm,370-375nm,375-380nm,380-390nm,390-395nm,395-400nm,400-405nm)

2.deep uv led can be with star board

3.High Peak Irradiance deep uv led

Dimensions of deep uv led (mm):

Notes: All dimensions in mm tolerance is ±0.1mm unless otherwise noted.

SPEC of deep uv led:

DC Forward Voltage (VF): 3.0 - 3.4Vdc
DC Forward Current (IF): 350mA
Viewing Angle: 140 Degree(90-140degree by customization)
Peak Wavelength:365-370nm

Lens:PC lens &silicone

Absolute Maximum Ratings (Ta = 25°C)

Parameter	Symbol	Rating	Unit
DC Forward Current	IF	350	mA
Peak Pulse Current	IFP	1000	mA
Reverse Voltage	VR	5	V
Power Dissipation	PD	1	W
Operation Temperature	TOPR	-30~+75	°C
Storage Temperature	TSTG	-40~+85	°C
Lead Soldering Temperature*	TJ	125	°C

Notes:1.. 1/10 Duty Cycle 0.1ms Pulse Width.

Typical Electrical & Optical Characteristics ( Ta = 25°C)

Parameter	Symbol	Conditions	Min	Avg.	Max	Units
Forward Voltage	VF	IF=350mA	3.0	--	3.4	V
Thermal Resistance Junction To Board	RΘJ-B	IF=350mA	--	10	--	°C/W
Luminous Flux	Φv	IF=350mA			5	lm
WLP	CCT	IF=350mA	370		375	nm
Temperature Coefficientof Forward Voltage	VF/T	IF=350mA	--	-2	--	mV/°C
Reverse Current	IR	VR=5V	--	--	10	μA
Viewing Angle	2Θ1/2	IF=350mA	--	140	--	Deg

Typical Optical/Electrical Characteristics Curves :

( Ta=25°CUnless Otherwise Noted )

Radiation Diagram of deep uv led:

Packing Standard of deep uv led:

Warranty of deep uv led:

All products manufactured by Guangmai Electronics Co., Ltd are under warranty regarding defective materials for a period of 4 yearsfrom the date of delivery to the original purchaser.

Certification of deep uv led:

Shipping Terms:

DHL,Fedex,EMS or International Air Mail(2-4 weeks to arrive)

Payment:

1.Paypal

2.T/T

3.Western Union

4.WireTransfer

5.L/C

Guangmai Electronics Co., Ltd specialize in 1-300W high power led,COB,SMD and led lights.

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